- 您现在的位置：买卖IC网 > Sheet目录532 > US6M11TR (Rohm Semiconductor)MOSFET N/P-CH 20V 1.5A TUMT6
US6M11
<N-ch>
Electrical characteristics (Ta=25 ° C)
Data Sheet
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
±10
Unit
μ A
Conditions
V GS = ±10V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
20
?
?
V
I D = 1mA, V GS =0V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
I DSS
V GS (th)
R DS (on) ?
?
0.3
?
?
?
?
?
?
130
170
220
300
1
1.0
180
240
310
600
μ A
V
m ?
m ?
m ?
m ?
V DS = 20V, V GS =0V
V DS = 10V, I D = 1mA
I D = 1.5A, V GS = 4.5V
I D = 1.5A, V GS = 2.5V
I D = 0.8A, V GS = 1.8V
I D = 0.3A, V GS = 1.5V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Y fs
C iss
C oss
C rss
t d (on)
t r
t d (off)
t f
?
?
?
?
?
1.6
?
?
?
?
?
?
?
?
110
18
15
5
5
20
3
?
?
?
?
?
?
?
?
S
pF
pF
pF
ns
ns
ns
ns
V DS = 10V, I D = 1.5A
V DS = 10V
V GS =0V
f=1MHz
V DD 10V
I D = 1A
V GS = 4.5V
R L 10 ?
R G =10 ?
Total gate charge
Q g
?
?
1.8
?
nC
V DD
10V, V GS = 4.5V
Gate-source charge
Q gs
?
?
0.3
?
nC
I D = 1.5A
Gate-drain charge
Q gd
?
?
0.3
?
nC
R L
6.7 ?, R G = 10 ?
? Pulsed
Body diode characteristics (Source-drain) (Ta=25 ° C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V SD
?
?
?
1.2
V
I S = 1.5A, V GS =0V
? Pulsed
<P-ch>
Electrical characteristics (Ta=25 ° C)
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
± 10
Unit
μ A
Conditions
V GS = ± 10V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
? 12
?
?
V
I D = ? 1mA, V GS =0V
?
?
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
I DSS
V GS (th)
R DS (on)
Y fs ?
C iss
C oss
C rss
t d (on) ?
t r
t d (off) ?
t f ?
?
? 0.3
?
?
?
?
1.4
?
?
?
?
?
?
?
?
?
190
280
400
530
?
290
28
21
8
10
30
9
? 1
? 1.0
260
390
600
1060
?
?
?
?
?
?
?
?
μ A
V
m ?
m ?
m ?
m ?
S
pF
pF
pF
ns
ns
ns
ns
V DS = ? 12V, V GS =0V
V DS = ? 6V, I D = ? 1mA
I D = ? 1.3A, V GS = ? 4.5V
I D = ? 0.6A, V GS = ? 2.5V
I D = ? 0.6A, V GS = ? 1.8V
I D = ? 0.2A, V GS = ? 1.5V
V DS = ? 6V, I D = ? 1.3A
V DS = ? 6V
V GS = 0V
f=1MHz
V DD ? 6V
I D = ? 0.6A
V GS = ? 4.5V
R L 10 ?
R G = 10 ?
Total gate charge
Q g ?
?
2.4
?
nC
V DD
? 6V, V GS = ? 4.5V
Gate-source charge
Q gs ?
?
0.6
?
nC
I D = ? 1.3A
Gate-drain charge
Q gd ?
?
0.4
?
nC
R L
4.6 ?, R G = 10 ?
? Pulsed
Body diode characteristics (Source-drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD ?
Min.
?
Typ.
?
Max.
? 1.2
Unit
V
Conditions
I S = ? 1.3A, V GS =0V
? Pulsed
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/7
2009.07 - Rev.A
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
US6M1TR
MOSFET N+P 30,20V 1A TUMT6
US6U37TR
MOSFET N-CH 30V 1.5A TUMT6
USP3021RA
THERMISTOR NTC 10K OHM 1% PROBE
USP3986RC
THERMISTOR NTC 100K OHM 1% PROBE
USUG1000-103GRB
THERMISTOR NTC 10K 2% DO-35 UL
USUR1000-104G-06
THERMSTR NTC 100K 2% RING LUG UL
V23836-C18-C63
TXRX OPT 1X9 155MB/S 1310NM
V600-CHUD 1.9M
V600 WAND W/1.9M USB CBL
相关代理商/技术参数
US6M1TR
功能描述:MOSFET N+P 30 20V 1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
US6M2
制造商:ROHM Semiconductor 功能描述:MOSFET,Pch(20V,1A)Nch(30V,1.5A),TUMT6
US6M2_07
制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch+Pch MOSFET
US6M2TR
功能描述:MOSFET N+P 20V 1.5A/1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
US6T4
制造商:ROHM 制造商全称:Rohm 功能描述:Low frequency amplifier
US6T4_1
制造商:ROHM 制造商全称:Rohm 功能描述:Low frequency amplifier
US6T4TR
功能描述:两极晶体管 - BJT BIPOLAR PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
US6T5
制造商:ROHM 制造商全称:Rohm 功能描述:Low frequency amplifier (-30V, -2A)